[Article] Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells
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Optimization of Thermalisation Loss in the Quantum Dot Solar Cells using a Finite Element Method
As thermalisation loss is the dominant loss process in the quantum dot intermediate band solar cells (QD-IBSCs), it has been investigated and calculated for a QD-IBSC, where IB is created by embedding a stack of InAs(1-x) Nx QDs with a square pyramid shape in the intrinsic layer of the AlPySb(1-y) p-i-n structure. IB, which is an optically coupled but electrically isolated mini-band, divides th...
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We have studied the effects of AlGaAs energy barriers surrounding self-assembled InAs quantum dots in a GaAs matrix on the properties of solar cells made with multiple quantum dot layers in the active region of a photodiode. We have compared the fenced dot samples with conventional InAs/ GaAs quantum dot solar cells and with GaAs reference cells. We have found that, contrary to theoretical pred...
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